Impurity induced disordering produced lateral optical confinement in AlGaAs and InGaAs (on GaAs) quantum well waveguides

摘要

The impurity induced disordering technique is employed on an AlGaAs/GaAs quantum well optical waveguide to provide lateral optical confinement. The modal propagation constant and field profile are analysed using an improved Fourier decomposition method. The single mode operating region is given in terms of thickness of quantum well layers.