Study of defects in ion-implanted silicon using photoluminescence and positron annihilation

摘要

We report data on high-quality silicon samples implanted with 4MeV silicon ions at doses of 10~(12)-10~(14)cm~(-2) measured using variable energy positron annihilation spectroscopy (VEPAS) and photoluminescence (PL). Individual, mainly interstitial related, defect centres can be observed with PL, and the average depth and concentration of vacancy clusters (assuming di-vacancies) can be found with VEPAS. We measure these samples as functions of dose and annealing from room temperature to 600℃ and assess the circumstances in which PL can be used as a quantitative technique.