High Power 808nm Diode Lasers Grown By MOCVD Using MO Group V Sources in N_2 Ambient

摘要

In this contribution, the recent result of AlGaAs/GaAs high power diode laser emitting at 808nm grown by MOCVD using TBAs as group-V source and N_2 as carrier gas will be presented. This is the first report so far the high power AlGaAs/GaAs diode laser prepared by MOCVD growth using TBA group V MO source in 100% nitrogen ambient. Broad area stripe lasers has been prepared with stripe width of 150 μm. Lasing has been successfully achieved from the wafer with a low threshold current density of 267 A/cm~2 with the laser cavity length of 1000 μm. Laser diode devices with different cavity lengths, 1200 μm, 1000 μm and 800 μm, were cleaved to obtain the internal loss, α_i, and internal quantum efficiency, η_i, of the devices. The α_i received was about 9.7 cm~(-1) and the quantum efficiency, η_i, of 81% was deduced.