Effects of post-annealing process for CdS buffer layer in Cu2ZnSnS4 solar cells

摘要

We investigated effects of post-annealing after deposition of CdS buffer layer at various temperatures on photovoltaic performance of Cu2ZnSnS4 (CZTS) solar cell.We found that post-annealing at 300℃ made in-plane homogeneity of photovoltaic performances better than that at lower temperature.Structure of interface between CdS and CZTS was analyzed by some methods.The results supported that diffusion of Cd in buffer layer into CZTS layer was accelerated and epitaxial interface between CdS and CZTS was formed when the sample was annealed at higher temperature.