Atomic Structure of InAs and InGaAsQuantum DotsStudied by Cross-Sectional Scanning Tunneling Microscopy

摘要

In this paper we present cross-sectional scanning tunneling microscopymeasurements of different MOCVD and MOVPE grown quantum dot structures. Dependingon the special growth parameters completely different spatial structures of the quantum dotsare observed. Especially the insertion of growth interruptions and the overgrowth proceduredetermines the existence of segregation effects. Also the complete dissolution of alreadyexistent quantum dots during the overgrowth may occur.