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Origin of the Anomalous Hall Effect in theFerromagnetic Semiconductor Ga1-xMnxAs

机译:铁磁半导体Ga1-xMnxAs中异常霍尔效应的起源

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We present a detailed study of the Hall effect andmagnetoresistance as a function of magnetic field and temperature in aseries of metallic Ga1-xMnxAs samples, with 0.015≤x≤0.08 and Curietemperature TC between 45K and 112K. A contribution to the anomalousHall resistivity which varies as the square of the longitudinal resistivity isidentified. The magnitude of the anomalous Hall conductivity is in goodagreement with the predictions of a Berry phase theory of the anomalousHall effect for x≤0.06. In addition, hole densities are extracted as a functionof x, which are used to compare the measured TC with mean field theorypredicted values. TC is overestimated by the theory at large x, while at low xthe measured TC is significantly larger than predicted.
机译:我们对一系列金属Ga1-xMnxAs样品中霍尔效应和磁阻随磁场和温度的变化进行了详细研究,其中0.015≤x≤0.08,居里温度TC在45K和112K之间。确定了对霍尔电阻率异常的贡献,该贡献随纵向电阻率的平方而变化。霍尔电导率异常的大小与x≤0.06时霍尔异常效应的贝里相理论的预测吻合。另外,将孔密度提取为x的函数,用于将测得的TC与平均场理论预测值进行比较。理论在大x时高估了TC,而在低x时,测得的TC明显大于预期。

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