MAGNETIC SENSOR AND HALL SENSOR, EACH USING ANOMALOUS HALL EFFECT, AND METHOD FOR MANUFACTURING HALL SENSOR

摘要

Provided is a magnetic sensor using an anomalous Hall effect. Nonmagnetic metal layers are disposed on and below a ferromagnetic material so as to form a Hall voltage corresponding to a change in applied magnetic field. Linearity and saturation magnetization of the magnetic sensor depend on a thickness of the nonmagnetic metal layer and a thickness of the ferromagnetic material. In addition, provided is a Hall sensor using an anomalous Hall effect. Nonmagnetic metal layers are formed with respect to a ferromagnetic layer, and CoFeSiB constituting the ferromagnetic layer has a thickness ranging from 10 Å to 45 Å. A magnetic easy axis is formed in a direction perpendicular to an interface due to interface inducing action of the nonmagnetic metal layers. In addition, the Hall sensor includes a sensing region having a rhombic shape, an electrode line portion having a line shape, and a pad portion.