首页> 外文会议>International conference on the physics of semiconductors;ICPS >E1(TO) mode behavior of strained AlN films on sapphire
【24h】

E1(TO) mode behavior of strained AlN films on sapphire

机译:蓝宝石上应变AlN膜的E1(TO)模式行为

获取原文

摘要

The strain evolution in thin AlN films is assessed by x-ray reciprocal spacemapping and their vibrational properties are studied by infrared reflection spectroscopy. Ablue shift of the E1(TO) mode is linearly correlated with an increase of the strain in the films.The deformation potentials of AlN E1(TO) mode are experimentally determined for differentsets of stiffness constants and the comparison with earlier theoretically calculated values ismade.
机译:通过X射线倒向空间映射评估AlN薄膜中的应变演化,并通过红外反射光谱研究其振动特性。 E1(TO)模式的蓝移与薄膜中应变的增加呈线性相关。实验确定了不同刚度常数集下AlN E1(TO)模式的变形势,并与早期的理论计算值进行了比较。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号