AlN AlN METHOD FOR DEPOSITING A PIEZOELECTRIC FILM CONTAlNING AlN AND A PIEZOELECTRIC FILM CONTAlNING AlN

摘要

the present invention is at least two target (4; 5) in a vacuum chamber (1) relates to a method for depositing the piezoelectric film containing AlN on a substrate (2) by using a magnetron sputtering , at least one target (4; 5) of said target comprises aluminum, the gas mixture is introduced into the vacuum chamber 1, while the gas mixture comprising at least a reactive gas of nitrogen and an inert gas, a magnetron sputtering unipolar and bipolar modes plus plus modes are used alternately. In another aspect, the present invention (0.1 X 1.2); (0.1 Y 1.2) and (0.001 Z 0.1) the formula Al _X N _Y O _{Z containing AlN of} It relates to a film. ;