Fabrication of Submicron-Dot-Arrayed Carbon Nanotube Emitters Using DC Plasma Enhanced Chemical Vapour Deposition

摘要

Vertically aligned carbon nanotubes (VACNTs) were grown on submicron-sized dot array substrate,which have a dot size of 400 nm and various dot intervals using direct current plasma enhancedchemical vapour deposition (DC-PECVD) method. The dot catalyst array was fabricated by lift-offprocess using electron beam lithography technique. Field emission performance was improved byadjusting the dot interval, where the on-set electric field was reduced from 3.6 V/μm in the case of0.3 μm interval to 1.1 V/μm of 6 μm interval. Analysis based upon Fowler-Nordheim theory turnedout that the field enhancement factor β showed the largest value of about 3380, when the dot intervalexceeded twice of the length of CNTs because of reduction of field shielding effect.