A 300GHz Monolithic Integrated Amplifier in 0.5-μm InP Double Heterojunction Bipolar Transistor Technology

机译：采用0.5μmInP双异质结双极晶体管技术的300GHz单片集成放大器

获取原文

页面导航

摘要
著录项
引文网络
相似文献
相关主题

摘要

We present a compact, 6-stage terahertz monolithic integrated circuit (TMIC) amplifier with an operating frequency of 275-310GHz, formed by commom-base configured 0.5 um InP Double Heterojunction Bipolar Transistor (DHBT) and a multilayer thin-film microstrip (TFM) wiring environment. The amplifier small signal gain exhibits at 300GHz. The peak gain is 12.5dB at 280GHz. This is the first time reported InP DHBT TMIC amplifier operating in H-band employing TFM in china. The total size of this 6-stage amplifier is only 1.7 mm×0.9 mm.

机译：我们提供了一个紧凑的6级太赫兹单片集成电路（TMIC）放大器，其工作频率为275-310GHz，由基于通信的配置的0.5 um InP双异质结双极晶体管（DHBT）和多层薄膜微带（TFM）构成）接线环境。放大器的小信号增益在300GHz处表现出来。 280GHz时的峰值增益为12.5dB。这是中国首次报道采用TFM在H波段工作的InP DHBT TMIC放大器。该6级放大器的总尺寸仅为1.7 mm×0.9 mm。

著录项

来源
《International Conference on Microwave and Millimeter Wave Technology》|2018年|1-3|共3页
会议地点 Chengdu(CN)
作者
Sun Yan; Cheng Wei; Lu Hai Yan; Chen Ya Pei; Wang Yuan; Zhang Yong; Kong Yue Chan; Chen Tang Sheng;
展开▼
作者单位

Nanjing Electronic Devices Institute Scienceand Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing 210016 P. R. China;

University of Electronic Science and Technology of China Chengdu Fundamental Science on EHF Laboratory Chengdu 611731 P. R. China;

展开▼
会议组织
原文格式 PDF
正文语种
中图分类
关键词
Indium phosphide; III-V semiconductor materials; DH-HEMTs; Gain; Heterojunction bipolar transistors; Semiconductor device measurement;

机译：磷化铟； III-V半导体材料； DH-HEMT；获得;异质结双极晶体管；半导体器件测量;

相似文献

外文文献
中文文献
专利

1. A G-band terahertz monolithic integrated amplifier in 0.5-μm InP double heterojunction bipolar transistor technology [J] . Ou-Peng Li, Yong Zhang, Rui-Min Xu, 中国物理：英文版 . 2016,第005期

机译：采用0.5μmInP双异质结双极晶体管技术的G波段太赫兹单片集成放大器
2. E-band Indium Phosphide double heterojunction bipolar transistor monolithic microwave-integrated circuit power amplifier based on stacked transistors [J] . Squartecchia Michele, Johansen Tom K., Dupuy Jean-Yves, Microwave and optical technology letters . 2019,第2期

机译：基于堆叠晶体管的电子带铟磷化铟双异质结双极晶体管单整体微波集成电路功率放大器
3. High-Speed Uni-Traveling-Carrier Photodiodes Monolithically Integrated with InP Heterojunction Bipolar Transistors using Be Ion Implantation [J] . Norihide KASHIO, Shoji YAMAHATA, Minoru IDA, Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2006,第10A期

机译：利用离子注入与InP异质结双极晶体管单片集成的高速单行进带载光电二极管
4. A 300GHz Monolithic Integrated Amplifier in 0.5-μm InP Double Heterojunction Bipolar Transistor Technology [C] . Sun Yan, Cheng Wei, Lu Hai Yan, IEEE International Conference on Microwave and Millimeter Wave Technology . 2018

机译：0.5-μmINP双异质结双极晶体管技术的300GHz单片集成放大器
5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

机译：基于N沟道InGaAsP-InP的倒置通道技术器件（ICT）的设计，制造和表征，用于光电集成电路（OEIC）：双异质结光电开关（DOES），异质结场效应晶体管（HFET），双极倒置沟道场-效应晶体管（BICFET）和双极型反向沟道光电晶体管（BICPT）。
6. Fabrication Technology and Characteristics Research of a Monolithically-Integrated 2D Magnetic Field Sensor Based on Silicon Magnetic Sensitive Transistors [O] . Xiaofeng Zhao, Chenchen Jin, Qi Deng, 2018

机译：基于硅磁敏晶体管的单片集成二维磁场传感器的制造技术和特性研究
7. Measurement of the electron-initiated impact ionization coefficient of indium phosphide using InP-GaAsSb-InP double heterojunction bipolar transistors [O] . Lam Selena 2004

机译：使用InP-GaAsSb-InP双异质结双极晶体管测量磷化铟的电子引发的碰撞电离系数
8. InP/GaAsSb/InP Double Heterojunction Bipolar Transistors. [R] . Bolgnesi, C. R., Dvorak, M. W., Watkins, S. P. 2002

机译：Inp / Gaassb / Inp双异质结双极晶体管。

A 300GHz Monolithic Integrated Amplifier in 0.5-μm InP Double Heterojunction Bipolar Transistor Technology

摘要

著录项

引文网络

相似文献

相关主题

期刊订阅