High-Speed Uni-Traveling-Carrier Photodiodes Monolithically Integrated with InP Heterojunction Bipolar Transistors using Be Ion Implantation

摘要

Uni-traveling-carrier photodiodes (UTC-PDs) can be monolithically integrated with InP heterojunction bipolar transistors (HBTs) using Be ion implantation and rapid thermal annealing (RTA) for an activation of implanted Be. UTC-PDs share the base and collector layers of the HBTs; the photoabsorption layer of the UTC-PD is formed by selectively doping the collector with Be. The fabricated UTC-PDs exhibit an output voltage of over 0.5V and a 3-dB bandwidth of 100 GHz. The HBTs fabricated on the same wafer provide a peak f_t of 150 GHz and a peak f_(max) of 250 GHz at a collector current density of 1 mA/ μm~2. The RTA used to fabricate the UTC-PDs does not seriously degrade the current gain of the HBTs. These results indicate that Be ion implantation is a promising technique for integrating UTC-PDs and InP HBTs on the same wafer.