A Simulation Study on Single-Event Burnout in Power Normally-off AlGaN/GaN HEMT

著录项

• 来源
  《International Conference on Electronic Information Technology and Computer Engineering》|2019年|1546-1549|共4页
• 会议地点 Xiamen(CN)
• 作者

  Dongqing Hu; Helong Zhang; Xintian Zhou; Yunpeng Jia; Yu Wu; Xinyu Li; Yun Tang; Lihao Wang;

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• 作者单位

  Beijing University of Technology Faculty of Information Technology Beijing China 100124;

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• 会议组织
• 原文格式 PDF
• 正文语种
• 中图分类
• 关键词

  Ions; Aluminum gallium nitride; Wide band gap semiconductors; HEMTs; Current density; Semiconductor process modeling; Computational modeling;

  机译：离子;氮化铝镓;宽带隙半导体; HEMT;当前密度;半导体工艺建模;计算建模;