Fast Prediction Of Gate Oxide Reliability - Application Of The Cumulative Damage Principle For Transforming V-Ramp Breakdown Distributions Into TDDB Failure Distributions

摘要

In this paper a new technique for predicting gate oxide reliability with high confidence from easily accessible ramped voltage stress data is proposed. Given the parameter of the RVT stress profile, the concept of equivalence is successfully applied to convert stress time data at each ramp stress level to corresponding accumulated equivalent ages at any one stress level. Taking into account these ages until breakdown, failure probabilities with the parameters of the stress-life relationship being the only fitting parameters can directly be computed and converted to TDDB failure distributions