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NDIR gas sensing using high performance AllnSb mid-infrared LEDs as light source

机译:使用高性能AllnSb中红外LED作为光源的NDIR气体传感

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摘要

In this paper, we report the performance of room temperature operated mid-infrared light emitting diode (LED) with an InSb buffer layer and AllnSb active/barrier layers, which showed to be suitable for non-dispersive infrared (NDIR) gas sensing. Characterization of the LED was performed and we found that good carrier confinement and crystalline quality was responsible for its high performance. High efficiency light extraction was obtained by adopting backside emission architecture together with surface roughening treatment and TiO_2 anti-reflection coating. The fabricated AllnSb LED showed 75 % higher power conversion efficiency when compared with a commercially available device. The developed LED, together with a commercially available infrared (IR) detector equipped with band-pass optical filter (AK9710, manufactured by Asahi Kasei Microdevices) were coupled into a mirror system forming a light path length of 80 mm, which was tested for CO_2 gas sensing. For a non-absorbing environment, sensor output of 8 nA was obtained by driving the LED with peak current of 100 mA and, by exposing the system at CO_2 concentration of 1000 ppm signal reduction due to absorbance around 12% was obtained.
机译:在本文中,我们报告了具有InSb缓冲层和AllnSb有源/阻挡层的室温下操作的中红外发光二极管(LED)的性能,这些性能证明适用于非分散红外(NDIR)气体传感。对LED进行了表征,我们发现良好的载流子限制和晶体质量是其高性能的原因。通过采用背面发射结构,表面粗糙化处理和TiO_2抗反射涂层,获得了高效的光提取。与市售器件相比,所制造的AllnSb LED的功率转换效率高出75%。将开发的LED与配备有带通滤光片的商购红外(IR)检测器(旭化成微器件公司制造,AK9710)耦合到形成光路长度为80 mm的反射镜系统中,并测试了CO_2气体感应。在非吸收性环境中,通过以100 mA的峰值电流驱动LED,可获得8 nA的传感器输出,并且通过将系统暴露于1000 ppm的CO_2浓度下,由于吸收率降低了12%,从而获得了信号输出。

著录项

  • 来源
    《Infrared sensors, devices, and applications VII》|2017年|104040R.1-104040R.9|共9页
  • 会议地点 San Diego(US)
  • 作者单位

    Compound Semiconductor Develop. Dept., RD Center Asahi Kasei Microdevices Corporation 2-1, Samejima, Fuji, Shizuoka, Japan;

    Compound Semiconductor Develop. Dept., RD Center Asahi Kasei Microdevices Corporation 2-1, Samejima, Fuji, Shizuoka, Japan;

    Compound Semiconductor Develop. Dept., RD Center Asahi Kasei Microdevices Corporation 2-1, Samejima, Fuji, Shizuoka, Japan;

    Compound Semiconductor Develop. Dept., RD Center Asahi Kasei Microdevices Corporation 2-1, Samejima, Fuji, Shizuoka, Japan;

    Compound Semiconductor Develop. Dept., RD Center Asahi Kasei Microdevices Corporation 2-1, Samejima, Fuji, Shizuoka, Japan;

    Compound Semiconductor Develop. Dept., RD Center Asahi Kasei Microdevices Corporation 2-1, Samejima, Fuji, Shizuoka, Japan;

    Compound Semiconductor Develop. Dept., RD Center Asahi Kasei Microdevices Corporation 2-1, Samejima, Fuji, Shizuoka, Japan;

    Compound Semiconductor Develop. Dept., RD Center Asahi Kasei Microdevices Corporation 2-1, Samejima, Fuji, Shizuoka, Japan;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    LED; photodiode; NDIR; infrared; gas sensor; carbon dioxide;

    机译:发光二极管;光电二极管NDIR;红外线;气体传感器二氧化碳;

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