The Physical Limit and Manufacturability of Power Diode with Carrier Lifetime Control

摘要

Carrier Lifetime Control (CLC) power diode is known to perform better than the standard power diode in terms of low loss, high switching speed and high reverse blocking voltage. We perform an extensive MEDICI device simulation covering a large parameter space of the structural and doping concentrations of the power diode through the use of Design of Experiment (DOE) matrix. The optimal electrical performance for each electrical parameter of the CLC power diode as well as the standard power diode is obtained, which represents the physical limit of these power diodes. The manufacturability of the power diodes are evaluated through the sensitivity analysis of these optimal electrical performances with respect to the variation of the structural and doping parameters. Such variations represent the process variations during actual diode fabrication.