1.7kV NPT V-groove clustered IGBT: fabrication and experimental demonstration

摘要

Novel 1.7kV NPT V-groove Trench CIGBT structures have been fabricated using an inexpensive wet etch technology for the trench gates. This approach can significantly reduce the costs inherent in the case of a conventional RIE. Experimental results show current saturation and short-circuit capability. Moreover, the V-groove CIGBT can be switched off without any additional circuit.