Experimental Demonstration of High-Voltage 4H-SiC Bi-Directional IGBTs

摘要

We experimentally demonstrate, for the first time, bi-directional 4H-SiC planar gate, insulated gate bipolar transistors fabricated on 250-μm thick, lightly doped free-standing substrates. On Si face, forward voltage drop (at 50 A/cm2) of 9.7 V was obtained at room temperature, with a differential ON-resistance of 140 mQ · cm2, indicating good conductivity modulation. We have also demonstrated control over minority carrier injection in static characteristics of the BD-IGBTs by application of a back-gate bias.