Designing and fabrication of 10-kV 4H-SiC PiN diodes with an improved junction termination structure have been investigated. An improved bevel mesa structure and a single-zone junction termination extension (JTE) have been employed to achieve a high breakdown voltage (ges 10 kV). The improved bevel mesa structure, nearly a vertical sidewall at the edge of the p-n junction and a gradual slope at the mesa bottom, has been fabricated by reactive ion etching. The effectiveness of the improved bevel mesa structure has been experimentally demonstrated. The JTE region has been optimized by device simulation, and the JTE dose dependence of the breakdown voltage has been compared with experimental results. A 4H-SiC PiN diode with a JTE dose of 1.1 times 1013 cm-2 has exhibited a high blocking voltage of 10.2 kV. The locations of electric field crowding and breakdown are also discussed.
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