Bi-directional IGBT you have connected the reverse blocking IGBT type in antiparallel

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device which has a small ON-state voltage, when an IGBT is kept in operation and a diode keeps operating forward and has a small reverse recovery current and soft recovery characteristics, when a diode operates in reverse. SOLUTION: A p-base region 2 is formed on the surface layer of a semiconductor substrate 100, an n+ -emitter region 3 is formed on the surface layer of the p-base region 2, a p+ -collector region 5 (a p+ -region 15 formed on a side, and a back p+ -collector region 5a) is formed on the periphery, rear of the semiconductor substrate 100 so as to surround the p-base region 2, and the p+ -collector region 5 is set as a thick of about 1 μm.