Npt - semiconductor component in the form of a first and second mosfets or igbts

摘要

Npt - semiconductor component in the form of a first and second mosfets or igbts with– a drift zone (9) is of a first conductivity type;– a on the one side of the drift zone (9) and designed to the drift zone (9) adjacent further semiconductor zone (3, 11) from one to the first conductivity type opposite second conductivity type, wherein the further semiconductor zone (3, 11) a higher maximum dopant concentration than the drift zone (9) and is connected to a contact plane;– a on the other, to the one side opposite side of the drift zone (9) designed rear zone (10, pages);– a when a static the upshot of breakage voltage of the npt - semiconductor component between the contact plane and back sides zone (10) remaining neutral drift zones field (14) between a within the drift zone (9) formed part of a space charge zone (rlz) and the rear sides zone (10) is arranged:– within the neutral drift zones area (14) comprises a compensation zone (15) is embedded which, starting from the same conductivity type as the drift zone (9), and a in the comparison..