A High-Performance Resonant Gate-Drive Circuit for MOSFETs and IGBTs

摘要

This paper presents a high-performance resonant gate-drive circuit for MOSFETs and IGBTs, which has high efficiency, fast switching capability, high robustness, and simple topology and control scheme. The proposed gate-drive circuit recycles the gate energy through a resonant inductor. The resonant inductor is precharged before resonance to achieve fast switching. After resonance, the circuit feeds back the remaining energy stored in the inductor. Power loss of the resonant gate-drive circuit is analyzed, and a design procedure to minimize the power loss by optimizing the inductor and precharge time is presented. Experimental results are shown to verify the effectiveness of the proposed circuit. Compared to conventional gate drivers, the proposed circuit reduces the power loss by 80%.