首页> 外国专利> A NEW GATE DRIVE CIRCUIT FOR IGBTS AND MOSFETS FOR INDUSTRIAL ELECTRONICS APPLICATIONS

A NEW GATE DRIVE CIRCUIT FOR IGBTS AND MOSFETS FOR INDUSTRIAL ELECTRONICS APPLICATIONS

机译:用于工业电子应用的IGBT和MOSFET的新型门极驱动电路

摘要

The invention relates to an improved switched mode power supply (SMPS) circuit of fly-back and/or forward type for industrial electronic appiication being connectable to an input supply voltage (E), comprising an unisolated driver (2,3) connected to a first solid state switching device of MOSFET or IGBT switches via two halves (RG1, RG2) of a gate circuit resistance, said first switching device being operably connected to a second solid state switching device of MOSFET or IGBT switches; a fly-back inductor and/or forward converter transformer (4) disposed between said first and second switching devices. An isolated gate driver (5,6) is interposed between said switching devices for generating isolated gate pulses capable to withstand a voltage potential difference which the source terminals of said sol id state switches being subjected to, the isolated gate driver (5,6) comprising a capacitor (C), plurality of resistances (Rl, R2, R3), and at least one voltage clamping device (zl).
机译:本发明涉及一种用于工业电子应用的回扫和/或正向型的改进的开关模式电源(SMPS)电路,该电路可连接到输入电源电压(E),包括连接到电源的非隔离驱动器(2,3)。 MOSFET或IGBT的第一固态开关器件通过两个一半的栅极电路电阻(RG1,RG2)进行开关,所述第一开关器件可操作地连接到MOSFET或IGBT的第二固态开关器件。设置在所述第一和第二开关装置之间的反激电感器和/或正激转换器变压器(4)。隔离栅极驱动器(5,6)插入在所述开关装置之间,用于产生能够承受所述固态开关源极受到的电压电位差的隔离栅极脉冲,隔离栅极驱动器(5,6)包括电容器(C),多个电阻(R1,R2,R3)和至少一个电压钳位装置(z1)。

著录项

  • 公开/公告号IN2001CA00542A

    专利类型

  • 公开/公告日2005-12-09

    原文格式PDF

  • 申请/专利权人

    申请/专利号IN542/CAL/2001

  • 发明设计人 PRASAD DR DINKAR;VENKATARATNAM PROF K;

    申请日2001-09-20

  • 分类号H01H47/00;

  • 国家 IN

  • 入库时间 2022-08-21 21:38:55

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