A New Gate Drive Circuit for MOSFETs Switching at Low Frequency

摘要

A new gate drive circuit, with ferrite core transformer isolation, for power MOSFETs switching at low frequency in the macro Hertz range has been presented . The techniqueinvolves periodic refreshing of charge on the effective gate source capacitance of the MOSFET in order to ensure low ON-state resistance,,$R_{DS}$ (ON ), by maintaining its gate source voltage above the threshold level.The simulation of the drive circuit using circuit analysis program PSPICE is described with results and relevant waveforms.