A New Gate Drive Circuit For MOSFETs Switching At Low Frequency

摘要

A new gate drive circuit, with ferrite core transformer isolation, for power MOSFETs switching at low frequency in the micro Hertz range has been presented. The technique involves periodic refreshing of charge on the effective gate source capacitance of the MOSFET in order to ensure low ON-state resistance, R (ON), by maintaining its gate-source voltage above the threshold level. The simulation of the drive circuit using circuit analysis program PSPICE is described with results and relevant waveforms.