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Transistor circuit for monitoring switching state of MOSFET installed as low-side switch receives square-wave control signal and includes drive switch, current monitor and evaluation circuit

机译:晶体管电路,用于监视安装在低侧开关上的MOSFET的开关状态,该晶体管电路接收方波控制信号,并包括驱动开关,电流监控器和评估电路

摘要

A square-wave is fed to the first terminal (IN) of the circuit. The input is fed to a drive switching circuit (10) which is connected to earth (GND) and the source (S) of the MOSFET (T). The drive switching circuit is also connected to a current monitor circuit (20) which in turn is sends a current (Ig) to the gate (G) of the MOSFET. The drive switching circuit also sends a current measurement signal (S1) to the evaluation circuit (30) which produces a transistor state signal (ST). The drain (D) of the MOSFET is connected to a power supply voltage (Vcc) via a load resistor (Last).
机译:方波被馈送到电路的第一端子(IN)。输入被馈送到驱动开关电路(10),该电路连接到地(GND)和MOSFET(T)的源极(S)。驱动开关电路还连接到电流监控器电路(20),电流监控器电路又将电流(Ig)发送到MOSFET的栅极(G)。驱动开关电路还将电流测量信号(S1)发送到评估电路(30),该评估电路产生晶体管状态信号(ST)。 MOSFET的漏极(D)通过负载电阻(Last)连接到电源电压(Vcc)。

著录项

  • 公开/公告号DE10316223B3

    专利类型

  • 公开/公告日2004-09-09

    原文格式PDF

  • 申请/专利权人 INFINEON TECHNOLOGIES AG;

    申请/专利号DE2003116223

  • 发明设计人 KIEP ANDREAS;

    申请日2003-04-09

  • 分类号H03K17/18;

  • 国家 DE

  • 入库时间 2022-08-21 22:43:20

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