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Notice of Removal: Upright and inverted single junction GaAs solar cells grown by hydride vapor phase epitaxy

机译：拆除通知：通过氢化物气相外延生长的直立和倒置单结GaAs太阳能电池

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《IEEE Photovoltaic Specialist Conference》|2017年|1-4|共4页
会议地点 Washington(US)
作者
John Simon; Kevin L. Schulte; Nikhil Jain; Michelle Young; Matthew R. Young; David L. Young; Aaron J. Ptak;
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National Renewable Energy Laboratory Golden CO 80401 USA;

National Renewa;

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1. Epitaxial Lift-Off of Single-Junction GaAs Solar Cells Grown Via Hydride Vapor Phase Epitaxy [J] . Yasushi Shoji, Ryuji Oshima, Kikuo Makita, Photovoltaics, IEEE Journal of . 2021,第1期

机译：通过氢化物气相外延生长的单结GaAs太阳能电池外延升降
2. Single junction solar cell employing strain compensated GaAs_(0.965)Bi_(0.035)/ GaAs_(0.75)P_(0.25) multiple quantum wells grown by metal organic vapor phase epitaxy [J] . Kim Honghyuk, Kim Kangho, Guan Yingxin, Applied Physics Letters . 2018,第25期

机译：采用金属有机气相外延生长的应变补偿GaAs_（0.965）Bi_（0.035）/ GaAs_（0.75）P_（0.25）多量子阱的单结太阳能电池
3. Analysis of subcell open-circuit voltages of InGaP/GaAs dual-junction solar cells fabricated using hydride vapor phase epitaxy [J] . Aihara Taketo, Tayagaki Takeshi, Oshima Ryuji, Japanese journal of applied physics . 2020,第SG期

机译：使用氢化物气相外延制造的InGaP / GaAs双结太阳能电池的子单元开路电压分析
4. Upright and Inverted Single Junction GaAs Solar Cells Grown by Hydride Vapor Phase Epitaxy [C] . John Simon, Kevin L. Schulte, Nikhil Jain, IEEE Photovoltaic Specialist Conference . 2017

机译：通过氢化物气相外延生长的直立和倒立的单结GaAs太阳能电池
5. Characterization of Hydride Vapor Phase Epitaxy Grown GaN Substrates for Future III-Nitride Growth [D] . Kawagy, Alaa 2019

机译：用于未来III-氮化物生长的氢化物气相外延生长GaN衬底的表征
6. Publisher Correction: Gallium arsenide solar cells grown at rates exceeding 300 µm h−1 by hydride vapor phase epitaxy [O] . Wondwosen Metaferia, Kevin L. Schulte, John Simon, -1

机译：出版商更正：氢化物气相外延生长砷化镓太阳能电池的速度超过300 µm h-1
7. Gallium arsenide solar cells grown at rates exceeding 300 µm h−1 by hydride vapor phase epitaxy [O] . Wondwosen Metaferia, Kevin L. Schulte, John Simon, 2019

机译：通过氢化物气相外延以超过300μmH-1的速率生长的砷化镓太阳能电池

Notice of Removal: Upright and inverted single junction GaAs solar cells grown by hydride vapor phase epitaxy

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