机译:采用金属有机气相外延生长的应变补偿GaAs_(0.965)Bi_(0.035)/ GaAs_(0.75)P_(0.25)多量子阱的单结太阳能电池
Univ Wisconsin, Dept Elect & Comp Engn, Madison, WI 53706 USA;
Ajou Univ, Dept Elect Engn, Suwon 443749, South Korea;
Univ Wisconsin, Dept Mat Sci & Engn, 1509 Univ Ave, Madison, WI 53706 USA;
Ajou Univ, Dept Elect Engn, Suwon 443749, South Korea;
Univ Wisconsin, Dept Chem & Biol Engn, Madison, WI 53706 USA;
Univ Wisconsin, Dept Elect & Comp Engn, Madison, WI 53706 USA;
机译:金属有机气相外延生长的应变补偿GaAs_(0.64)Sb_(0.36)/ GaAs_(0.79)P_(0.21)量子阱结构的光学表征
机译:大气压金属有机气相外延在GaAs衬底上生长的GaAs_(1-x)Bi_x材料的光谱椭偏研究
机译:Ga和Sb前驱体化学性质对通过金属有机气相外延生长的伪变形GaAs_(1-y)Sb_y薄膜中合金成分的影响
机译:在GaAs衬底上通过金属-有机气相外延生长的应变补偿的InGaAs / InGaAsP多量子阱结构中和附近的晶格畸变减少
机译:金属有机气相外延生长过程中In(x)Ga(1-x)N / In(y)Ga(1-y)N多量子阱结构的稳定性
机译:金属有机化学气相沉积在蓝宝石衬底上生长的低Al成分p-GaN / Mg掺杂Al0.25Ga0.75N / n + -GaN极化诱导的反向隧穿结
机译:多层势垒对金属有机气相外延生长GaInNAs单量子阱结构光学性质的影响