机译:通过氢化物气相外延生长的单结GaAs太阳能电池外延升降
National Institute of Advanced Industrial Science and Technology Tsukuba Japan;
National Institute of Advanced Industrial Science and Technology Tsukuba Japan;
National Institute of Advanced Industrial Science and Technology Tsukuba Japan;
Taiyo Nippon Sanso Corporation Tsukuba Japan;
National Institute of Advanced Industrial Science and Technology Tsukuba Japan;
Gallium arsenide; Substrates; Photovoltaic cells; Inductors; Silicon; Manufacturing; Impurities;
机译:III-V型化合物半导体中的缺陷结构:氢化物传输汽相外延生长的InGaAs和InGaAsP外延层中缺陷结构的产生和演化
机译:通过动态氢化物气相外延,GaAs太阳能电池的均匀性在动态氢化物气相外延生长
机译:氢化物气相外延制备InGaP层生长的GaAs太阳能电池
机译:通过氢化物气相外延生长单结GaAs太阳能电池外延升降
机译:用于未来III-氮化物生长的氢化物气相外延生长GaN衬底的表征
机译:出版商更正:氢化物气相外延生长砷化镓太阳能电池的速度超过300 µm h-1
机译:通过氢化物气相外延以超过300μmH-1的速率生长的砷化镓太阳能电池