Epitaxial Lift-Off of Single-Junction GaAs Solar Cell Grown via Hydride Vapor Phase Epitaxy

摘要

Hydride vapor phase epitaxy (HVPE) is attracting attention as a technique for fabricating low-cost III–V solar cells (SCs). To further reduce the manufacturing cost, the substrate must be reused via epitaxial lift-off (ELO) with AlAs as the release layer. However, there is a technical issue in growing Al containing materials because aluminum monochlorides react with the HVPE reactor. Here, we demonstrate the growth of AlAs via HVPE using aluminum trichlorides generated by the reaction between Al metal and HCl gas at a temperature of <500 °C. Furthermore, we present the performance of HVPE-grown GaAs SC after ELO process.