Buffer trapping effects on knee walkout in GaN HEMTs

机译：GaN HEMT中缓冲俘获对膝盖罢工的影响

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A potential link between traps located in the buffer and the AC/DC dispersion commonly observed in GaN HEMTs is studied by simulating the device in class A amplifier operations. We have revealed that acceptor traps located in the buffer at energy level close to valence band (E

机译：通过模拟A类放大器操作中的器件，研究了位于缓冲器中的陷阱与GaN HEMT中常见的AC / DC色散之间的潜在联系。我们发现受体陷阱位于能级接近价带（E的能级）

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《IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems》|2017年|1-4|共4页
会议地点 Tel-Aviv(IL)
作者
B. Ubochi; K. Ahmeda; K. Kalna;
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Nanoelectronic Devices Computational Group (NanoDeCo) College of Engineering Swansea University Bay Campus Fabian Way Swansea SA1 8EN Wales United Kingdom;

Nanoelectronic Devices Computational Group (NanoDeCo) College of Engineering Swansea Univer;

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HEMTs; MODFETs; Radio frequency; Gallium nitride; Integrated circuit modeling; Aluminum gallium nitride; Wide band gap semiconductors;

机译：HEMT； MODFET;无线电频率;氮化镓集成电路建模；氮化铝镓；宽带隙半导体;

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专利

1. Buffer Trap Related Knee Walkout and the Effects of Self-Heating in AlGaN/GaN HEMTs [J] . Ubochi Brendan, Ahmeda Khaled, Kalna Karol ECS Journal of Solid State Science and Technology . 2017,第11期

机译：缓冲陷阱相关膝关节罢工和自加热中的影响在Algan / GaN Hemts中
2. Effects of the Trap Level in the Unintentionally Doped GaN Buffer Layer on Optimized p-GaN Gate AlGaN/GaN HEMTs [J] . Mei Ge, Qing Cai, Baohua Zhang, Physica status solidi . 2018,第2期

机译：无意识掺杂的GaN缓冲层中陷阱水平对优化的p-GaN栅极AlGaN / GaN HEMT的影响
3. Negative transconductance effect in p-GaN gate AlGaN/GaN HEMTs by traps in unintentionally doped GaN buffer layer [J] . Mei Ge, Qing Cai, Bao-Hua Zhang, 中国物理：英文版 . 2019,第010期

机译：p-GaN栅极AlGaN / GaN HEMT中无意识掺杂的GaN缓冲层中的陷阱引起的负跨导效应
4. Buffer Trapping Effects on Knee Walkout in GaN HEMTs [C] . B. Ubochi, K. Ahmeda, K. Kalna IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems . 2017

机译：在GaN Hemts膝盖罢工的缓冲诱捕效果
5. Trapping Effects in Aluminum Gallium Nitride/Gallium Nitride HEMTs for High Frequency Applications : Modeling and Characterization Using Large Signal Network Analyzer and Deep Level Optical Spectroscopy. [D] . Yang, Chieh Kai. 2011

机译：用于高频应用的氮化铝镓/氮化镓HEMT中的陷获效应：使用大信号网络分析仪和深层光谱学进行建模和表征。
6. Donor-Like Surface Traps on Two-Dimensional Electron Gas and Current Collapse of AlGaN/GaN HEMTs [O] . Chen-hui Yu, Qing-zhou Luo, Xiang-dong Luo, 2013

机译：二维电子气上的供体样表面陷阱以及AlGaN / GaN HEMT的电流崩塌
7. Buffer Trap Related Knee Walkout and the Effects of Self-Heating in AlGaN/GaN HEMTs [O] . Kalna Karol 2017

机译：缓冲陷阱相关的膝关节走动和alGaN / GaN HEmT中自加热的影响
8. Design of GaN/A1GaN HEMT Class-E Power Amplifier Considering Trapping and Thermal Effects. [R] . Islan, S. S., Anwar, A. F. 2002

机译：考虑陷阱和热效应的GaN / alGaN HEmT E类功率放大器设计。

Buffer trapping effects on knee walkout in GaN HEMTs

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