Negative transconductance effect in p-GaN gate AlGaN/GaN HEMTs by traps in unintentionally doped GaN buffer layer

著录项

• 来源
  《中国物理：英文版》 |2019年第10期|569-575|共7页
• 作者

  Mei Ge; Qing Cai; Bao-Hua Zhang; Dun-Jun Chen; Li-Qun Hu; Jun-Jun Xue; Hai Lu; Rong Zhang; You-Dou Zheng;

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• 作者单位

  The Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and Engineering Nanjing University Nanjing 210093 China;

  Department of Physics Changji College Changji 831100 China;

  School of Electronic Science and Engineering Nanjign University of Posts and Telecommunications Nanjing 210023 China;

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• 正文语种 eng
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