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Mixed-Signal High-Voltage CMOS Control Circuit For RF MEMS Varactors

机译:用于RF MEMS变容二极管的混合信号高压CMOS控制电路

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To make MEMS varactors more robust and reliable, a closed-loop control circuit was designed to sense the varactor capacitance and tune the MEMS bias in real time to adjust the capacitance to the desired value within 1 fF and in 200 μs. The designed circuit was successfully implemented in a standard RF CMOS technology despite the challenge for handling high voltage at high speed and for suppressing the substrate-coupled noise. The fabricated chip was tested to function according to the design simulation and to be capable of switching 150 V repeatedly.
机译:为了使MEMS变容二极管更坚固可靠,设计了一个闭环控制电路来感应变容二极管电容并实时调整MEMS偏置,以在1 fF内和200μs内将电容调整至所需值。尽管面临高速处理高压和抑制衬底耦合噪声的挑战,但设计的电路已成功用标准RF CMOS技术实现。根据设计仿真测试了制成的芯片的功能,并且能够反复切换150V。

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