Temperature Investigations of InP/InGaAs Based Photocathodes

机译：InP / InGaAs基光电阴极的温度研究

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Application of InP/InGaAs photocathodes in devices, which work short-wave infrared range are justified. Construction of the vacuum photoelectronic detector is represented. All steps of creation effective photocathode based on the InP/InGaAs heterostructures were given. The effects of temperature variations on InP/InGaAs photocathode are investigated.

机译：证明InP / InGaAs光电阴极在工作于短波红外范围的设备中的应用是合理的。表示了真空光电探测器的结构。给出了基于InP / InGaAs异质结构创建有效光电阴极的所有步骤。研究了温度变化对InP / InGaAs光电阴极的影响。

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《IEEE International Conference on Electrical Engineering and Photonics》|2018年|209-211|共3页
会议地点 St. Petersburg(RU)
作者
Konstantin J. Smirnov; Vadim V. Davydov; Gleb V. Tushavin; Sergei F. Glagolev;
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作者单位

OJSC “NRI “Electron” Bonch-Bruevich Saint – Petersburg State University of Telecommunications Saint Petersburg Russia;

Peter the Great Saint – Petersburg Polytechnic University Saint Petersburg Russia;

OJSC “NRI “Electron” Saint Petersburg National Research University of Information Technologies Mechanics and Optics Saint Petersburg Russia;

Bonch-Bruevich Saint – Petersburg State University of Telecommunications Saint Petersburg Russia;

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关键词
Cathodes; Dark current; Signal to noise ratio; Cooling; Quantum dot lasers; Temperature; Photodetectors;

机译：阴极;暗电流信噪比；冷却;量子点激光器；温度;光电探测器;

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1. Temperature Dependence of Avalanche Multiplication in InP-Based HBTs With InGaAs/InP Composite Collector: Device Characterization and Physics Model [J] . Hong Wang, Hong Yang, Wah-Peng Neo, IEEE Transactions on Electron Devices . 2003,第12期

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2. Interface engineering of InGaAs/InP layer for photocathode [J] . Guo Jing, Zhao Jing, Yang Mingzhu Optik: Zeitschrift fur Licht- und Elektronenoptik: = Journal for Light-and Electronoptic . 2020,第期

机译：光电阴极InGaAs / InP层的接口工程
3. APS -APS March Meeting 2017 - Event - Power and temperature dependent photoluminescence investigation of the linear polarization at normal and inverted interface transitions in InP/InAlAs and InGaAsP/InAlAs QW structures [J] . Hamidreza Esmaielpour, Vincent R. Whiteside, Louise C. Hirst, Bulletin of the American Physical Society . 2017,第4期

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4. Temperature Investigations of InP/InGaAs Based Photocathodes [C] . Konstantin J. Smirnov, Vadim V. Davydov, Gleb V. Tushavin, IEEE International Conference on Electrical Engineering and Photonics . 2018

机译：基于INP / InGaAs光电阴极的温度研究
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机译：在BCl（3）基化学中的III-V半导体的电感耦合等离子体蚀刻：第二部分：Inp，InGaas，InGaasp，Inas和allnas;应用表面科学

Temperature Investigations of InP/InGaAs Based Photocathodes

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