Large-area Visible-blind 4H-SiC Ultraviolet Avalanche Photodiode with High Gain and Low Bias Voltage

摘要

and low bias voltage (i.e. low breakdown voltage) of 50.6 V are achieved at room temperature. Additionally, a maximum quantum efficiency of 30% is obtained at 270nm with the reverse bias voltage of 10 V, which can be further improved by optimizing device structures.