Robust the ESD Reliability by Drain-side Super-junctions for the UHV Circular nLDMOS

摘要

In this paper, 300 V circular nLDMOS DUTs is used as the experimental benchmark group, and a smart architecture of HVPW is added into the HVNW drift-region to form a super-junction (SJ) structure (radial-type SJ). And then, for the HVPW/HVNW area modulation of radial-type SJ, three different kinds of area ratios is fabricated. However, the HBM capacity of this nLDMOS reference group has only 2500V. Furthermore, as for the radial-type SJ and HVPW/HVNW with different proportions of area modulation in the drift region, it has the highest HBM-immunity capacity of 7000V when the HVPW/HVNW area ratio of 2 to 1. That is to say, in the SJ architecture, the higher the proportion of HVPW/HVNW, the stronger its ESD immunity reliability.