Extraction and de-embedding of S-parameters using small-signal modeling for AlGaN/GaN HEMTs

摘要

At high frequency, various structures such as probe, pads and interconnect-metal lines affect the parameter measurement of HEMT device. To precisely measure the device intrinsic performance, it is required to de-embed these parasitic effects. In this paper, only two structures based de-embedding procedure is used to reach to the device plane. This paper shows difference between measured and extracted S-parameters based on Berroth and Meras model, with de-embedding and without de-embedding. In this paper we use fabricated AlGaN/GaN HEMT on SiC transistor of 0.8×100 μ m