Small-signal parameter extraction of asymmetric DCDMG AlGaN/GaN HEMT

Yadav Rahis Kumar; Pathak Pankaj; Mehra R. M.

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Small-signal parameter extraction of asymmetric DCDMG AlGaN/GaN HEMT

机译：非对称DCDMG AlGaN / GaN HEMT的小信号参数提取

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Purpose - This paper aims to report small-signal parameter extraction and simulation of enhanced dual-channel dual-material gate AlGaN/GaN high electron mobility transistor (HEMT) for the first time for the characterization of a device in microwave range of frequency.

机译：目的-本文旨在首次报道增强型双通道双材料栅极AlGaN / GaN高电子迁移率晶体管（HEMT）的小信号参数提取和仿真，以表征微波频率范围内的器件。

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来源
《Compel》 |2018年第1期|386-400|共15页
作者
Yadav Rahis Kumar; Pathak Pankaj; Mehra R. M.;
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作者单位

Sharda Univ, Sch Engn Technol, Dept Elect & Commun Engn, Greater Noida, India;

Sharda Univ, Sch Engn Technol, Dept Elect & Commun Engn, Greater Noida, India;

Sharda Univ, Sch Engn Technol, Dept Elect & Commun Engn, Greater Noida, India;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类
关键词
Cutoff and maximum oscillation frequency; DCDMG-HEMT; Dual-material gate; Microwave figure of merits; S-parameter analysis; Small signal model;

机译：截止和最大振荡频率;DCDMG-HEMT;双材料门;微波功因数;S参数分析;小信号模型;

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专利

1. Small-signal model parameter extraction for AlGaN/GaN HEMT [J] . Yu Le, Zheng Yingkui, Zhang Sheng, Journal of Semiconductors . 2016,第3期

机译：AlGaN / GaN HEMT的小信号模型参数提取
2. A new small-signal modeling and extraction method in AlGaN/GaN HEMTs [J] . Jing Lu, Yan Wang, Long Ma, Solid-State Electronics . 2008,第1期

机译：AlGaN / GaN HEMT中的新小信号建模和提取方法
3. Thermal characterization of DC and small-signal parameters of 150nm and 250nm gate-length AlGaN/GaN HEMTs grown on a SiC substrate [J] . Alim Mohammad A., Rezazadeh Ali A., Gaquiere Christophe Semiconductor science and technology . 2015,第12期

机译：SiC衬底上生长的150nm和250nm栅长AlGaN / GaN HEMT的直流热特性和小信号参数
4. Extraction and de-embedding of S-parameters using small-signal modeling for AlGaN/GaN HEMTs [C] . Pragyey Kumar Kaushik, Umakant Goyal IEEE India Council International Conference . 2017

机译：使用小信号建模对AlGaN / GaN HEMT进行S参数的提取和去嵌入
5. Analysis of Heat Dissipation in AlGaN/GaN HEMT with GaN Micropits at GaN-SiC Interface [D] . Suri, Suraj. 2016

机译：GaN-SiC界面处具有GaN微坑的AlGaN / GaN HEMT中的散热分析
6. High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers [O] . Ya-Ju Lee, Yung-Chi Yao, Chun-Ying Huang, 2014

机译：使用AlGaN / GaN / AlGaN量子阱电子阻挡层的AlGaN / GaN HEMT中的高击穿电压
7. High Frequency Analysis and Small-Signal Modeling of AlGaN/GaN HEMTs with SiO2/SiN Passivation [O] . Moujahed Gassoumi, Abdelhamid Helali, Malek Gassoumi, 2018

机译：SIO2 / SIN钝化Algan / GaN Hemts的高频分析和小信号建模
8. Development of a Versatile Physics-Based Finite-Element Model of an AlGaN/GaN HEMT Capable of Accommodating Process and Epitaxy Variations and Calibrated Using Multiple DC Parameters (Postprint) [R] . Heller, E. R., Vetury, R., Green, D. S. 2011

机译：开发基于物理的alGaN / GaN HEmT有限元模型，该模型能够适应工艺和外延变化并使用多个DC参数进行校准（后印刷）

Small-signal parameter extraction of asymmetric DCDMG AlGaN/GaN HEMT

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