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Thermal Performance Evaluation of New Power QFN (Quad Flat No Lead) Packages for Automotive Applications

机译:用于汽车应用的新型功率QFN(四方扁平无铅)封装的热性能评估

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An extensive 3-D conjugate numerical study is conducted to assess the thermal performance of the novel Power Quad Flat No Lead (PQFN) packages for automotive applications. Several PQFN packages are investigated, ranging from smaller die/flag size to larger ones, single or multiple heat sources, operating under various powering and boundary conditions. The steady state and transient thermal performance are compared to those of the classical packages, and the impact of the thicker lead frame and die attach material on the overall thermal behavior is also evaluated. Under one steady state (1W) operating scenario, the PQFN package reaches a peak temperature of ~106.3℃, while under 37W@40ms of transient powering, the peak temperature reached by the corner FET is ~ 260.8℃. With an isothermal boundary (85℃) attached to the board backside, the junction temperature does not change, as the PCB has no significant thermal impact. However, when the isothermal boundary is attached to package bottom, it leads to a drop in by almost 20% after 40 ms. Additional transient cases are evaluated, with an emphasis on the superior thermal performance of this new class of power packages for automotive applications.
机译:进行了广泛的3-D共轭数值研究,以评估用于汽车应用的新型Power Quad Flat No Lead(PQFN)封装的热性能。研究了几种PQFN封装,从较小的芯片/标志尺寸到较大的,单个或多个热源,可以在各种功率和边界条件下运行。将稳态和瞬态热性能与传统封装的稳态和瞬态热性能进行了比较,并且还评估了较厚的引线框和管芯连接材料对整体热性能的影响。在一种稳态(1W)工作方案下,PQFN封装的峰值温度达到〜106.3℃,而在37W @ 40ms的瞬态供电下,拐角FET达到的峰值温度为〜260.8℃。在板背面贴有一个等温边界(85℃)时,结温不会改变,因为PCB没有明显的热影响。但是,当等温边界连接到封装底部时,它会导致40毫秒后下降近20%。对其他瞬态情况进行了评估,重点是用于汽车应用的新型功率封装的出色热性能。

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