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Electrical characterization and structure investigation of quad flat non-lead package for RFIC applications

机译:用于RFIC的四方扁平无铅封装的电气特性和结构研究

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摘要

The quad flat non-lead (QFN) package is a both chip scale package and plastic encapsulated package with a copper leadframe substrate. The purpose of this paper was to establish the wideband equivalent circuit model of QFN packages for RF applications. Only short-path configuration was required for S-parameter measurement to achieve this purpose. Comparison of S_(11) and S_(21) between S-parameter measurement and optimized equivalent circuit model verified that those results were well matched and optimized. The parasitic parameters of the equivalent circuit were reliable up to 6 GHz. The methods proposed in this paper reduce the costs for samples preparation and chip simulation run time. In order to realize the package performance for higher frequency applications further, a 3D structure electromagnetic field simulator, HFSS, was used to simulate from 0.1 to 20 GHz for five modified package structures. Simulation results indicated that the QFN32 package that utilized the double bonding wires with a lower dielectric-constant molding compound and larger die-pad is the best structure for RF applications.
机译:四方扁平无铅(QFN)封装是芯片级封装和带有铜引线框架基板的塑料封装封装。本文的目的是建立用于RF应用的QFN封装的宽带等效电路模型。 S参数测量仅需要短路径配置即可达到此目的。通过S参数测量和优化的等效电路模型对S_(11)和S_(21)的比较,可以证明这些结果是良好匹配和优化的。等效电路的寄生参数在6 GHz以下是可靠的。本文提出的方法降低了样品制备和芯片仿真运行时间的成本。为了进一步实现更高频率应用的封装性能,使用了3D结构电磁场仿真器HFSS对五个修改后的封装结构进行了0.1至20 GHz的仿真。仿真结果表明,采用双键合引线和较低的介电常数模塑料以及较大的芯片焊盘的QFN32封装是RF应用的最佳结构。

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