Stress relaxation mechanism by strain in the Si-SiO_2 system and its influence on the interface properties

摘要

The results of stress relaxation investigation by analyses of EPR spectra, IR absorption spectra, SEM and samples deflection, are presented. It has been shown that the stress relaxation mechanisms depends on the oxidation conditions: temperature, cooling rate, oxide thickness. In the Si-SiO_2-Si_3N_4 system the relaxation of stresses by the strains occur due to the opposite sign of the thermal expansion coefficients of Si-SiO_2 and Si_3N_4 on Si. Laser irradiation was used to modify the stresses in system.