Angle-Resolved PES Studies on Transition Layers at SiO_2/SiC Interfaces

摘要

We investigated on the chemical bonding states of thermally oxidized SiO_2/SiC in detail by the angle-resolved X-ray photoemission spectroscopy. Analyses of Si 2p, C 1s and O1s spectra show that the signal arising from sub-oxide is detected, and that the signals related carbon in SiO_2 and C-C in SiC are detected. We also characterized SiO_2/4H-SiC by Hard X-ray photoemission spectroscopy in order to check the depth profile of carbon in oxide in detail.