Department of Electrophysics, National Chiao Tvmg University, Hsinchu City 30010, Taiwan;
Department of Electrophysics, National Chiao Tvmg University, Hsinchu City 30010, Taiwan;
Department of Electrophysics, National Chiao Tvmg University, Hsinchu City 30010, Taiwan;
Department of Electrophysics, National Chiao Tvmg University, Hsinchu City 30010, Taiwan;
Department of Electrophysics, National Chiao Tvmg University, Hsinchu City 30010, Taiwan;
hydride vapor phase epitaxy; non-polar gallium nitride; semiconducting III-V materials;
机译:在独立式HVPE-生长的GaN基材中掺入碳
机译:HVPE生长的厚自由站立GaN衬底的位错揭示和分类
机译:HVPE GaN衬底上具有HVPE生长的漂移层的GaN功率肖特基二极管的IVT测量
机译:HVPE生长的独立式厚GaN衬底的位错揭示和分类
机译:用于AlGaN / GaN和InAlN / GaN二极管以及在硅(111)衬底上生长的高迁移率晶体管的CMOS兼容氧化钌肖特基接触的研究。
机译:通过原位GaN纳米点形成生长的Au / HVPE a平面GaN模板形成的肖特基二极管的电子传输机制
机译:通过HVPE生长的R面蓝宝石对1000℃的生长温度和V / III比率的影响