Breakdown characteristics in AlGaN/GaN HEMTs with multi-field-plate structure

摘要

We have fabricated AlGaN/GaN high electron mobility transistors (HEMTs) with a multi-field-plate structure. An enhanced breakdown voltage was achieved by introducing a multi-field-plate to a conventional HEMT structure. This is the first report demonstrating enhanced breakdown characteristics by applying a bias voltage to the field-plate.