首页> 外文会议>Fifteenth International Symposium on Chemical Vapor Deposition, May 14-18, 2000, Toronto, Ontario >EFFECT OF H_2S ON THE MICROSTRUCTURE AND DEPOSITION CHARACTERISTICS OF CHEMICALLY VAPOUR DEPOSITED A1_2O_3
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EFFECT OF H_2S ON THE MICROSTRUCTURE AND DEPOSITION CHARACTERISTICS OF CHEMICALLY VAPOUR DEPOSITED A1_2O_3

机译:H_2S对化学气相沉积A1_2O_3的微观结构和沉积特性的影响

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The influence of experimental variables in combination with catalysis on the growth and microstructure of CVD K-Al_2O_3 was investigated. The Al_2O_3 coatings were deposited in the temperature range of 800-1000℃ and at pressures of 50 to 400 mbar. Hydrogen sulphide (H_2S) was used as a doping/catalysing agent. General deposition characteristics of K-Al_2O_3 as a function of temperature, pressure and H_2S concentration are reported. In general, K-Al_2O_3 deposited at different process conditions did not exhibit any pronounced microstructural or morphological differences. However, at deposition temperature of 800℃ together with higher doping levels (H_2S>0.8%) γ-Al_2O_3 was obtained. Enrichment of sulphur could be confirmed to occur inγ-Al_2O_3 while no sulphur was found in K-A1_2O_3.
机译:研究了实验变量和催化作用对CVD K-Al_2O_3的生长和微观结构的影响。 Al_2O_3涂层的沉积温度为800-1000℃,压力为50-400 mbar。硫化氢(H_2S)用作掺杂/催化剂。报道了K-Al_2O_3的一般沉积特性随温度,压力和H_2S浓度的变化。通常,在不同工艺条件下沉积的K-Al_2O_3没有表现出明显的微观结构或形态学差异。然而,在800℃的沉积温度和较高的掺杂水平(H_2S> 0.8%)下,获得了γ-Al_2O_3。可以确认在γ-Al_2O_3中发生了硫富集,而在K-A1_2O_3中未发现硫。

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