Large-Signal Modeling of SiGe HBTs Including aNew Substrate Network Extraction Method

摘要

Large-signal modeling results of SiGe HBTswith HICUM (High Current Transistor Model) arepresented. Moreover, a new and robust method todetermine the substrate network elements of bipolartransistors from S-parameter measurements is proposedin this work. The investigated substrate network iscompatible with HICUM and includes the substratecollectordepletion capacitance, substrate resistance andcapacitance.