Large-Signal Modeling of SiGe HBTs Including a New Substrate Network Extraction Method W

摘要

Large-signal modeling results of SiGe HBTs with HICUM (High Current Transistor Model)are presented.Moreover,a new and robust method to determine the substrate network elements of bipolar transistors from S-parameter measurements is proposed in this work.The investigated substrate network is compatible with HICUM and includes the substrate- collector depletion capacitance,substrate resistance and capacitance.