Center for Integrated Electronics Department of Electrical, Computer and Systems Engineering Rensselaer Polytechnic Institute Troy, NY 12180 USA;
bipolar junction transistor; 4H-SiC; emitter injection efficiency; base transport factor; minority carrier lifetime;
机译:使用CH3Cl碳气前驱体在低温下外延生长4H-SiC:生长速率,表面形貌和气相成核的影响
机译:低温光致发光探测4H-SiC外延层中的缺陷退火
机译:低温同质外延生长产生的p型4H-SiC欧姆接触形成重掺杂铝外延层
机译:低温和高温性能为600V 4H-SIC外延发射器BJT
机译:基于4H-SiC N型外延层和像素Cdznte单晶装置的高分辨率辐射检测器
机译:低温下外延银中等离子性能的增强
机译:低温下外延银中的等离子体性能提高