Epitaxially grown n~+ phosphorus collector peaks in high-frequency hbt's with implanted emitters

摘要

The boron out-diffusion into the Si collector of SiGe HBT's with implanted emitters is compensated by an epitaxially grown n~+ phosphorus peak effectively positioned adjacent to the as-grown boron peak. Detrimental barrier formation is suppressed in devices with base sheet resistance 3.3 k#OMEGA# and cut-off frequency of 31 GHz.