Size Effects on DC and Low-Frequency-Noise Characteristics of Epitaxially Grown Raised-Emitter SiGe HBTs

机译：外延生长的凸起发射器SiGe HBT的直流和低频噪声特性的尺寸效应

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DC and low-frequency-noise characteristics of epitaxially grown raised-emitter (ERE) SiGe HBTs were investigated Experimental results indicate unexpected emitter-size dependencies of both base current and low-frequency noise. An ERE SiGe HBT with a scaled emitter exhibits about 10 times smaller 1/f noise than a poly-Si emitter SiGe HBT.

机译：上外延生长的升高发射器（ORE）SiGe HBT的DC和低频噪声特性进行了研究实验结果表明基本电流和低频噪声的意外发射极尺寸依赖性。具有缩放发射极的ERE SiGe HBT展示了比Poly-Si发射器SiGe HBT更小的1 / F噪声的10倍。

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来源
《Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》|2007年||共4页
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作者
Katsuyoshi Washio;
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原文格式 PDF
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中图分类 TN43-53;
关键词
Epitaxial growth; Heterojunction bipolar transistor (HBT); Low-frequency noise (1/f noise); Polysilicon (poly-Si) emitter; SiGe;

机译：外延生长;异质结双极晶体管（HBT）;低频噪声（1 / F噪声）;多晶硅（Poly-Si）发射器;Sige;

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1. Dc And Low-frequency-noise Characterization Of Epitaxially Grown Raised-emitter Sige Hbts [J] . Katsuyoshi Washio Thin Solid Films . 2008,第1期

机译：外延生长的发射极Sige Hbts的直流和低频噪声表征
2. High energy swift heavy ion irradiation and annealing effects on DC electrical characteristics of 200?GHz SiGe HBTs [J] . Vinayakprasanna N. Hegde, K.C. Praveen, T.M. Pradeep, Nuclear engineering and technology . 2019,第5期

机译：高能快速重离子辐照和退火对200？GHz SiGe HBT直流电特性的影响
3. DC characteristics and stability behaviour of high-speed Si/SiGe HBTs with undoped SiGe spacer between base and collector [J] . Schreiber H.-U., Albers J.N. Electronics Letters . 1992,第13期

机译：在基极和集电极之间具有未掺杂SiGe隔离层的高速Si / SiGe HBT的直流特性和稳定性
4. Size Effects on DC and Low-Frequency-Noise Characteristics of Epitaxially Grown Raised-Emitter SiGe HBTs [C] . Katsuyoshi Washio Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems . 2007

机译：外延生长的凸起发射器SiGe HBT的直流和低频噪声特性的尺寸效应
5. STUDIES ON DYNAMIC CHARACTERISTICS OF SMALL-SIZED DC MOTOR AND TRANSIENT BEHAVIORS OF MAGNETIC FLUXES IN ITS COMMUTATING ZONE AND SO ON [D] . Ando, Tsuguo 1986

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7. The Effects of Proton and X-Ray Irradiation on the DC and AC Performance of Complementary (npn + pnp) SiGe HBTs on Thick-Film SOI [O] . Marco Bellini, Bongim Jun, Akil K. Sutton, 2007

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Size Effects on DC and Low-Frequency-Noise Characteristics of Epitaxially Grown Raised-Emitter SiGe HBTs

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